High‑NA EUV's reduced field size is driving new innovation in optical proximity correction and mask synthesis.

Dose response of MORs can be further improved by raising the oxygen concentration above atmospheric levels during the EUV lithography post-exposure bake step ...

Making high-NA EUV lithography work will take a manufacturing-worthy approach to stitching together circuits or a wholesale change to larger masks. Circuit stitching between the exposure fields is ...