Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

In a specific crystal phase, hafnium oxide, or hafnia, exhibits ferroelectric properties that scientists have been trying to leverage for years. Theorists at the University of Rochester helped take an ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

This infographic outlines the background, methodologies, and results of this study, which advances our knowledge of materials for ultra-low-power ferroelectric memory devices. Researchers synthesize ...

When logic and memory operate at the same ultralow voltage, data transfer becomes seamless, hinting at new efficiencies in AI ...

By engineering the device structure of ferroelectric memory and introducing a nanogate-induced electric field concentration effect, the researchers developed a ferroelectric transistor capable of ...

NY CREATES and Fraunhofer IPMS announced at a signing ceremony a new Joint Development Agreement (JDA) to drive research and development focused on memory devices. The JDA will leverage and link the ...

A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology ...