In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...

Compared with the industry-standard 60-V MOSFET, the device offers a higher breakdown voltage of 100 V and�with an on-resistance of 0.72 W �about five times the continuous current. The device is ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...

A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...

(Nanowerk Spotlight) For new generation electronic appliances advanced nanoscale transistors are in demand which needs precise biasing of each device. These stringent biasing conditions can be relaxed ...

Advanced Micro Devices has created new high-performance transistors in its labs based on the simple concept that sometimes two are better than one. The chipmaker said Tuesday it has manufactured in ...

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...