IR’s latest high-voltage gate drivers are ideal for three-phase applications that require industrial level ruggedness. These new ICs feature IR’s proprietary negative Vs immunity circuitry, allowing ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
The BS2103F is a monolithic high and low side gate driver IC, designed to drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel, a feature ofthe device, can be ...
Gate drivers are essential circuits positioned between the controller and power semiconductor devices. By providing high-current drive and voltage amplification, they ensure efficient switching, fast ...