A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
A US court has told Samsung to pay $400 million in damages after it found the company's FinFET technology infringed on a patent originally filed by a South Korean university. The Korea Advanced ...
To deliver increased processor performance for engine and body control systems, one leading semiconductor supplier knew it ...
Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
Taiwan Semiconductor Manufacturing Company (TSMC) announced that on June 12 at the Symposium on VLSI Technology in Honolulu, Hawaii it demonstrated a record-setting field-effect transistor (FET) that ...
According to the Taiwan Economic Daily, TSMC’s 2nm process has made a major breakthrough. The research and development process is now in advanced stages. The company is optimistic that its risk trial ...
For more than five decades, the semiconductor industry advanced along a remarkably predictable path. Moore’s Law guided transistor scaling, while Dennard scaling ensured that reducing dimensions ...
Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...
IBM, working with Samsung and GlobalFoundries, has unveiled the world’s first 5nm silicon chip. Beyond the usual power, performance, and density improvement from moving to smaller transistors, the 5nm ...
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