A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration. (Nanowerk News) Researchers ...
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Motorola develops a dual-gate transistor in which the two gates can switch on and off independently--a twist the company says could increase performance and reduce power consumption. Michael Kanellos ...