A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the ...
Effect of fabrication process on contact resistance and channel in graphene field effect transistors
Contact resistance, as one of the main parameters that limits the performance of graphene-based transistors, is highly dependent on the metal-graphene contact fabrication processes. These processes ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
IBM on Thursday demonstrated its fastest graphene transistor, which can execute 155 billion cycles per second, which is about 50% faster than previous experimental transistors shown by the company’s ...
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