SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...
MALVERN, Pa., Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power modules designed specifically for on-board charger ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
ON Semiconductor has announced two 1200-V silicon carbide (SiC) MOSFET 2-pack modules for the electric vehicle (EV) market, ahead of APEC 2021. The SiC MOSFET modules, based on planar technology, can ...
SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Advanced Power Technology Europe has added 100-V MOSFET modules to the existing product range in SP3, SP4 and SP6 packages. These modules are offered in single-switch, buck, boost, dual-common source, ...
SemiQ has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact system-level designs at large scale. 1200 V SiC ...
UNTERHACHING, GERMANY: The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance ...
International Rectifier has introduced the IRF4000, a 100-V-rated device integrating four HEXFET MOSFETs into a single Power MLP package for Power-over-Ethernet (PoE) applications. The new device ...
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