Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today’s VLSI circuits, although the device geometry, voltage and current levels are significantly ...
Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...
Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.
Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
You almost have to feel some empathy for insulated-gate bipolar transistors (IGBTs). They have been the workhorse of many motor and power projects for decades and continue in that role. But now it ...
Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, ...
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