Cree, Inc. announces the sample release of a 90W, highly efficient GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, radar, tactical ...
DURHAM, N.C., JANUARY 28, 2009 — Cree, Inc (Nasdaq: CREE) announces the sample release of two 120W, highly efficient GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, ...
Scientists have demonstrated, for the first time, that transistors made from single-walled carbon nanotubes can operate at extremely fast microwave frequencies, opening up the potential for better ...
A major current law has been rewritten thanks to the three-port transistor laser. Data the transistor laser generated did not fit neatly within established circuit laws governing electrical currents, ...
M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...
Washington, D.C., June 30, 2015 -- Portable electronics users tend to upgrade their devices frequently as new technologies offering more functionality and more convenience become available. A report ...
Northrop Grumman Corporation (NYSE:NOC) and the University of Illinois at Urbana-Champaign have created the first fully-functional, all-carbon nanotube transistor radio, demonstrating that carbon ...
Kirchhoff's current law has been rewritten thanks to a three-port transistor laser developed at the University of Illinois, US. While the laws of physics weren't made to be broken, sometimes they need ...
Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.
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