A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

A proton-mediated approach that produces multiple phase transitions in ferroelectric materials could help develop high-performance memory devices, such as brain-inspired, or neuromorphic, computing ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

Imagine a future where your phone, computer or even a tiny wearable device can think and learn like the human brain -- processing information faster, smarter and using less energy. A breakthrough ...

A new technical paper titled “Toward Capacitive In-Memory-Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware” was published by researchers at Tampere ...

Ferroelectric quantum dots enable phototransistors that adapt to low light and store visual memory, supporting motion recognition and in-sensor learning in neuromorphic systems. (Nanowerk Spotlight) ...

Researchers from King Abdullah University of Science and Technology (KAUST), Qingdao University, and Zhejiang University developed a method to produce multiple phase transitions in ferroelectric ...

The stability of (Al,Sc)N films, with minimal changes in values suggests their suitability for next-generation ferroelectric memory devices. In a study published in the journal Applied Physics Letters ...