PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor [NYSE: FSL], the global leader in radio frequency (RF) power transistors, today introduced two ultra-wideband RF power gallium nitride (GaN) ...
Neubiberg, Germany — Infineon Technologies AG has announced a new family of RF power transistors in an open-cavity plastic package with a copper base, targeted at the high-volume cellular ...
Less than ten years after introducing the industry’s first RF power transistor housed entirely in plastic, Freescale Semiconductor (NYSE:FSL)(NYSE:FSL.B) has shipped more than 30 million high-power ...
A new package platform is being rolled out across Ampleon’s LDMOS and GaN product portfolio. More than a dozen variants of the SOT502 and SOT539 platforms are said to be in development. The ACP3, a ...
Single-stage broadband drivers in HVSON, from 2.5 to 10W Single-stage drivers from 25 to 45 W Dual-stage MMICs from 20 to 60 W which can be used as high-gain drivers or combined as low power ...
STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced new radio-frequency (RF) power transistors built using an advanced ...
A rapid increase in wireless connectivity and more sensors, coupled with a shift away from monolithic SoCs toward heterogeneous integration, is driving up the amount of analog/RF content in systems ...
Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...
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