A new method to build more energy-efficient memory devices could lead to a sustainable data future

A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access ...
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Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage

The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, ...