Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications. Compared to traditional semiconductors (such as silicon), gallium ...
5G technology has led to the introduction of a significant number of new RF features that need to be implemented in mobile networks while considering stringent constraints in board space and power ...
CARLSBAD, Calif.--(BUSINESS WIRE)--MaxLinear Inc. (NASDAQ: MXL) and RFHIC (KOSDAQ: 218410) today announced a collaboration to deliver a production-ready 400MHz Power Amplifier (PA) solution for 5G ...
A collaboration between A*STAR, Nanyang Technological University and Soitec is claiming to have broken new ground in the ...
CHANDLER, Ariz.--(BUSINESS WIRE)--Satellite communication systems use complex modulation schemes to achieve the blazingly fast data rates required to deliver video and broadband data. To attain this, ...
What are the different materials are used in creating GaN power transistors? The impact of heat on performance. A rundown of high-power RF GaN transistors currently on the market. Solid-state power ...
SCOTTSDALE, Ariz., March 20, 2017 /PRNewswire/ -- Gallium Nitride (GaN) RF power semiconductor devices gained meaningful market share over the last two years, despite a lackluster 2016, with 2017 ...
For defense applications operating over a bandwidth of 25 MHz to 1 GHz, the Model RF-30001 RF power amplifier employs GaN RF power transistors that deliver at least 20W of CW RF output power. It ...
Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the ...
New Monolithic GaN converters from STMicroelectronics help boost energy savings in a wide range of applications.
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