Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs ...

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...

Melexis has introduced the MLX91299, a silicon-based RC snubber designed for use with silicon carbide (SiC) power modules in automotive and industrial high-voltage systems. The device combines a ...

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the ...

Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...

Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing. Dec. 2, 2014 Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an ...

MOSFETs using silicon carbide and gallium nitride technology are emerging to fill the power-controller need in electric and hybrid electric vehicles, and, while they are not yet in volume production, ...

Infineon is set to debut its HybridPack Drive G2 Fusion, a power module combining silicon and silicon carbide (SiC), at next month’s electronica 2024 trade show. Intended for traction inverters in the ...

Rohm has introduced a 1,200V 300A all-silicon carbide half-bridge power module, with reduced inductance compared with its first devices – claimed stray inductance is 13nH. Rohm began mass production ...

In June Infineon will ship an automotive power module with CoolSiC MOSFET technology. The HybridPACK Drive CoolSiC is a full-bridge module with 1200 V blocking voltage optimized for traction inverters ...