IRFZ44N is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 17.5 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 49 A

Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and troubleshooting tips.

Apr 18, 2019 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting.

View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

IRFZ44N MOSFET specs: N-Ch/55V/49A. View the complete datasheet, pin configuration, and find equivalent or replacement transistors.

Jun 3, 2025 · The IRFZ44N MOSFET is specifically designed for applications like motor drivers, inverters, SMPS, and LED systems. And, this is because of its high current carrying capacity, low on …

Apr 11, 2024 · The IRFZ44N is a popular N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications. It is known for its high current handling …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ44N is an N-Channel MOSFET capable of switching high voltage and current levels. It is popularly known for reliability and durability as it has a maximum drain-to-source voltage of 55v and drain …