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DUV micro-LED array advances maskless photolithography. Researchers find way to 'hear' defects in hBN. Towards better solar cells. DOE funds AlScN research. Simulations point the way towards better solar cells. Bandgap and device engineering boost DUV LED efficiency. Speeding up the discovery of materials. Novel method restores QD solar cells.
NeoPhotonics Samples SOAs and Lasers for Coherent Lidars
NeoPhotonics SOAs and NLW lasers operate in eye-safe wavelength regions, and these offerings feature 1550nm wavelength SOAs with >24 dBm (>250mW) output power along with 1550nm NLW-DFB lasers that enable automotive Lidar systems to 'see' considerably farther than 200 meters, thereby significantly enhancing safety.
Institute for Compound Semiconductors
Compound semiconductors drive the devices and technologies we use today, from smartphones and tablets to satellite communications and GPS. Our institute for Compound Semiconductors, led by Prof. Diana Huffaker, is a partnership between IQE Systems and the Welsh Government that positions Cardiff at the leading edge of translating research into …
Vertical integration is shaping the Power SiC ecosystem
May 3, 2022 · The SiC ecosystem has been reshaped by these major players in the past years. According to Yole, two main trends impact its supply chain: vertical integration of wafer manufacturing and module packaging to gain more revenues in the coming years. In this context, end-system companies, for example, automotive OEMs, are adopting SiC quicker and ...
The allure of cubic SiC - News - Compound Semiconductor
Oct 12, 2022 · The allure of cubic SiC. Wednesday 12th October 2022. The exceptional electronic and mechanical properties of the cubic form of SiC are enabling this polytype to take rapid strides towards serving in medical devices, MEMS and power electronic applications. BY FRANCESCO LA VIA FROM THE INSTITUTE FOR MICROELECTRONICS AND MICROSYSTEMS.
Stacking GaN and silicon transistors on 300 mm silicon
May 18, 2020 · The I D -V characteristics of Intel’s e-mode high-κ dielectric GaN NMOS transistor on a 300 mm silicon wafer showing a high drive drain current that is approaching 1.5 mA/mm, a low knee voltage (it is below 1 V), and an on-resistance, R ON, of just 610 W-Ωm. Low drain leakage, with I OFF as low as 100 pA/mm at 5 V drain voltage, and ...
Qromis: ready for business - News - Compound Semiconductor
Feb 24, 2020 · Qromis: ready for business - News. As the GaN market gathers momentum, Qromis is serving up fab-friendly substrates and epi-wafers to ease device manufacture. In January this year, Silicon Valley based Qromis, revealed two developments that signal the company is on the cusp of rapid expansion. For starters, the fabless, wide bandgap materials ...
SemiQ Unveils QSiC Power Modules in Half-Bridge Packages
Dec 14, 2023 · Our high-performance QSiC 1200 V MOSFET modules are proven to withstand challenging conditions, enabling engineers to develop reliable systems for the renewable, automotive, medical, and industrial sectors.”. SemiQ’s new 1200V 5 mΩ, 10 mΩ, and 20 mΩ SiC MOSFET are available in industry standard half-bridge packages.
Atomera/Sandia project to address GaN/Si challenges
Atomera, a US semiconductor materials and technology licensing company, has announced a project at Sandia National Laboratories (a US Department of Energy, research centre), to address the challenges of growing GaN films on silicon. The project, which is a collaboration with the Centre for Integrated Nanotechnologies (CINT) at Sandia, aims to ...
Compound Photonics and Plessey announce microLED prototypes
Feb 12, 2020 · Compound Photonics US Corporation, a provider of high-resolution microdisplay solutions for Augmented Reality (AR) and Mixed Reality (MR) applications, and Plessey Semiconductors, a microLED company, have produced the first fully addressable microLED display modules resulting from their previously announced strategic partnership to develop and introduce GaN-on-Silicon microLED based ...